TRIAC and GTO Thyristors: Operation and Advantages

TRIAC

  • An SCR is a unidirectional device; it can conduct from anode to cathode only and not from cathode to anode.

A TRIAC can conduct in both directions.

TRIAC: Bidirectional thyristor with three terminals.

Extensively used for the control of power in AC circuits.

Image

Image

  • A TRIAC is a bidirectional device, and its terminals can have various combinations of positive and negative voltages. There are four possible electrode potential combinations, as given below:

MT2 is positive with respect to MT1, G positive with respect to MT1.

MT2 is positive with respect to MT1, G negative with respect to MT1.

MT2 is negative with respect to MT1, G negative with respect to MT1.

MT2 is negative with respect to MT1, G positive with respect to MT1.

Mode 1 (MT2 is Positive with Respect to MT1, G Positive with Respect to MT1)
  • TRIAC operates in the first quadrant.
    • When MT2 is positive with respect to MT1, junctions P1N1 and P2N2 are forward biased.
    • Junction N1P2 is reverse biased.
    • When G is positive with respect to MT1, gate current flows mainly through P2N2.
  • When gate current has injected sufficient charges into the P2 layer, the reverse-biased junction N1P2 breaks down.
    • As a result, the TRIAC starts conducting through P1N1P2N2.
    • Image

Mode 2 (MT2 is Positive with Respect to MT1, G Negative with Respect to MT1)

When G is negative with respect to MT1, gate current flows through P2N3.

N1P2 is forward biased.

Conduction through P1N1P2N3.

  • With the above conduction, the voltage drop across this path falls, but P2N3 rises towards MT2.

A potential gradient exists across P2.

  • The left-hand region becomes higher potential than the right-hand region.

Current (shown in the dotted line) is established.

Image

Mode 3 (MT2 is Negative with Respect to MT1, G Negative with Respect to MT1)
  • N3 acts as a remote gate.
    • Gate current flows from P2 to N3.
    • Reverse-biased junction N1P1 is broken.
    • Finally, P2N1P1N4 is turned on completely.
    • Operation is in the 3rd quadrant.
    • The device is more sensitive under this condition.
    • Image

Mode 4 (MT2 is Negative with Respect to MT1, G Positive with Respect to MT1)

Gate current forward biases junction P2N2.

N2 injects electrons into the P2 layer (shown by dotted arrows).

  • As a result, the reverse-biased junction N1P1 breaks down.
    • The structure P2N1P1N4 is completely turned on.
    • Current after turn-on is limited by external load.

The device is less sensitive.

Operation is in the 3rd quadrant.

Image

Triggering Circuit for TRIAC

Image

GTO (Gate Turn-Off Thyristor)

  • Conventional thyristors (CTs) are nearly ideal switches for their use in power electronic applications.
    • These can be easily turned on by a positive gate current.

Once in the on state, the gate loses control.

  • CTs can now be turned off by expensive and bulky commutation circuitry.
    • This shortcoming of thyristors limits their use up to about 1KHz applications.
    • These drawbacks in thyristors have led to the development of GTOs.
  • GTO is a more versatile power semiconductor device.
    • Like a CT but with added features.
    • It can be easily turned off by a negative gate pulse of appropriate amplitude.
    • GTO: A PNPN device that can be turned on by a positive gate current and turned off by a negative gate current at its gate-cathode terminal.
    • The self-turn-off capability of GTO makes it the most suitable device for inverter and chopper circuits.

Comparison between GTO and Thyristor

Disadvantages

  • The magnitude of latching and holding current is more.
    • On-state voltage drop and associated loss are more.
    • Triggering gate current required is high.
    • Gate drive circuit losses are more.
    • Reverse voltage blocking capability is less than forward voltage blocking capability.

Advantages

Faster switching speed.

  • Surge current capability is comparable with an SCR.
  • More di/dt rating at turn-on.
  • GTO circuit configuration has low size and weight.
  • Higher efficiency.
  • Reduced acoustical and electromagnetic noise due to the elimination of commutation chokes.

Power MOSFET

Image

Image